The invention includes a method of fabricating a laser device, that includes: depositing a photoresist on epitaxially grown layers, patterning said photoresist to form an aperture area, depositing a dielectric material on said patterned photoresist, depositing a liftoff layer on said dielectric material, removing portions of said dielectric material and liftoff layer that border said aperture area, implanting regions of the epitaxially grown layers bordering said aperture area, and depositing a metal layer on said dielectric material. The invention also includes a device including: a substrate comprising epitaxial layers and an aperture area, a dielectric mirror formed on top of said aperture area and an implanted region within said epitaxial layers, said implanted region bordering said aperture area.

 
Web www.patentalert.com

< Laser diode array, laser device, wave-coupling laser source, and exposure device

< Vertical cavity surface emitting laser including indium and antimony in the active region

> Cylindrical straight slab type gas laser

> Surface-emission laser diode operable in the wavelength band of 1.1-7m and optical telecommunication system using such a laser diode

~ 00226