A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

 
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