An embedded microelectronic capacitor incorporating at least one ground shielding layer is provided which includes an upper ground shielding layer that has an aperture therethrough; an electrode plate positioned spaced-apart from the upper ground shielding layer that has a via extending upwardly away from the electrode plate through the aperture in the upper ground shielding layer providing electrical communication to the electrode plate without shorting to the upper ground shielding layer; a middle ground shielding layer positioned in the same plane of the electrode plate, surrounding while spaced-apart from the electrode plate at a predetermined distance; a lower ground shielding layer positioned spaced-apart from the electrode plate in an opposing relationship to the upper ground shielding layer; and a dielectric material embedding the upper ground shielding layer; the middle ground shielding layer and the lower ground shielding layer.

 
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> Substrate having built-in semiconductor apparatus and manufacturing method thereof

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