An active pixel image sensor is formed on a P-type epitaxial layer on a P-type substrate. An active pixel array is in the P-type epitaxial layer. Each pixel includes an N-well functioning as a collection node, and a P-well adjacent the N-well. The P-well includes only NMOS transistors functioning as active elements. The in-pixel transistors cooperate with off-pixel PMOS transistors to form A-D converters.

 
Web www.patentalert.com

< Reinforced solder bump structure and method for forming a reinforced solder bump

< Field effect transistors and materials and methods for their manufacture

> Optoelectronic devices employing fibers for light collection and emission

> Optical semiconductor housing and method for making same

~ 00223