A mask pattern may be decomposed into two or more masks, each having a pitch greater than that of the original mask pattern. New, "partial-pattern" masks may be created for each of the new mask patterns. The original mask pattern is transferred to the photoresist for the corresponding layer using a multiple exposure technique in which the photoresist is exposed with each of the partial-pattern masks individually, e.g., back-to-back in a pass through a scanner, to define all of the features in the original pattern.

 
Web www.patentalert.com

< Automatic media alignment nip release mechanism

< Photo reticles using channel assist features

> Ultrawide bandwidth system and method for fast synchronization using sub-code spins

> Tunable chromatic dispersion compensator

~ 00222