A semiconductor laser element is fixed onto a submount by forming a metallic thin film at a region on a surface of a p-side electrode of the semiconductor laser element. A periphery of the thin metallic thin film is recessed from a periphery of the p-side electrode by a predetermined width. The metallic thin film is thermally processed together with the p-side electrode for increasing a size of the grains and connected through a solder layer to the submount. Parts of the p-side electrode and the submount, the metallic thin film and the solder layer include Au for improving a cushion function of the semiconductor laser device.

 
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> Zigzag slab laser amplifier with integral reflective surface and method

> Semiconductor laser apparatus

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