A temperature compensated RRAM sensing circuit to improve the RRAM readability against temperature variations is disclosed. The circuit comprises a temperature dependent element to control the response of a temperature compensated circuit to generate a temperature dependent signal to compensate for the temperature variations of the resistance states of the memory resistors. The temperature dependent element can control the sensing signal supplied to the memory resistor so that the resistance states of the memory resistor are compensated against temperature variations. The temperature dependent element can control the reference signal supplied to the comparison circuit so that the output signal provided by the comparison circuit is compensated against temperature variations. The temperature dependent element is preferably made of the same material and process as the memory resistors.

 
Web www.patentalert.com

< Semiconductor memory device and method of fabricating the same

< DRAM device and refresh control method therefor

> Unit tracking and notification in a graphical drug model editor

> Capacitor having a barrier layer made of a transition metal phosphide, arsenide or sulfide

~ 00221