By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.