In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1 and T5 are turned on and a MOS transistor T6 is turned off so that a MOS transistor T2 operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors T1 and T5 are turned off and the MOS transistor T6 is turned on so that the gate voltage of the MOS transistor T2 is kept constant. In this state, the MOS transistor T2 is brought first into a conducting state and then, by turning a signal VPS to a high level, into a cut-off state. This permits a signal proportional to the threshold value of the MOS transistor T2 to be output as compensation data.

 
Web www.patentalert.com

< Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material

< Power switch structure with low RDSon and low current limit

> Solid image-pickup device having a micro lens array and method of manufacturing the same

> Ultrasonic slitting of photovoltaic cells and modules

~ 00210