In an electron beam lithography apparatus, when a plotting pattern is an isolated
fine pattern, an exposure energy upon plotting lacks. In the prior art set forth
above, dimension dependent exposure energy correction is performed as a measure,
however, a problem is encountered in that excessive exposure is caused in regions
where the exposure area ratio is high. The present invention solves the problem
in the foregoing prior art and provides an electron beam lithography apparatus
and a lithography method using an electron beam which achieves good plotting dimension
accuracy even for a fine pattern plotting where regions having different exposure
area ratios are present in an admixing manner. Additionally, the present invention
has a construction to incorporate dimension dependent correction by taking a forward
scattering diameter as a reference dimension to establish an effective backward
scattering coefficient; to perform correction of an exposure energy using the effective
backward scattering coefficient and an exposure area ratio.