The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.

 
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< Junction-isolated depletion mode ferroelectric memory devices

> Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics

> Recording pole for delivering coincident heat and magnetic field

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