An object of the present invention is obtaining a semiconductor film with uniform
characteristics by improving irradiation variations of the semiconductor film.
The irradiation variations are generated due to scanning while irradiating with
a linear laser beam of the pulse emission. At a laser crystallization step of irradiating
a semiconductor film with a laser light, a continuous light emission excimer laser
emission device is used as a laser light source. For example, in a method of fabricating
an active matrix type liquid crystal display device, a continuous light emission
excimer laser beam is irradiated to a semiconductor film, which is processed to
be a linear shape, while scanning in a vertical direction to the linear direction.
Therefore, more uniform crystallization can be performed because irradiation marks
can be avoided by a conventional pulse laser.