A semiconductor device and a method for making the same that provide highly
reliable and high density arrangement of a connecting region for an
external connecting terminal, such as a bonding pad. Electrode layers are
connected to each other through embedded conductive layers forming
highly-superposed multi-layered structures without bumps. Openings are
provided in a second electrode layer, a first insulating interlayer and a
second insulating interlayer. The above layers are connected to each other
through openings. A prop of the insulating interlayer film is formed
between the third electrode layer and the first electrode layer. The props
prevent cracks from forming in the insulating interlayers when a load is
applied during wire-bonding.