The invention provides an Al alloy film for use as an electrode of a semiconductor device and also provides an Al alloy sputtering target used to produce such an Al alloy film wherein the Al alloy film has not only a low resistivity equal to or less than 5 .mu..OMEGA.cm and a high hillock resistance (property of hillock suppression) but also a high dielectric strength when it is anodized into an anodic oxide film and wherein the Al alloy film has a composition such that the Ni content is equal to or greater than 0.3 at % and the Y content is equal to or greater than 0.3 at % and such that 0.22 C.sub.Ni +0.74 C.sub.Y <1.6 at % where C.sub.Ni denotes the Ni content (at %) and C.sub.Y denotes the Y content (at %) and further wherein, in order to deposit the Al alloy film by sputtering, a spray forming Al alloy target containing Ni and Y is used.