The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process. The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming prosperities, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.

 
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