The Disclosed is a method of reading a memory device in a page mode. The method includes the steps of inputting a row address for selecting the word line, enabling a corresponding word line by the row address, and reading/restoring the level of the cell node connected to the enabled word line, and disabling the enabled word line and sequentially enabling bit line sense amplifiers connected to the disabled word line to perform a read operation, wherein the disabling of the selected word line is performed after a lapse of a certain time period as much as data of a first cell node can be restored. Therefore, it is possible to reduce current consumption in a read operation of a page mode.