The projection lithographic method for producing integrated circuits and forming patterns with extremely small feature dimensions includes an illumination sub-system (36) for producing and directing an extreme ultraviolet soft x-ray radiation from an extreme ultraviolet soft x-ray source (38); a mask stage (22) illuminated by the extreme ultraviolet soft x-ray radiation produced by illumination stage and the mask stage (22) includes a pattern when illuminated by radiation . A protection sub-system includes reflective multilayer coated Ti doped high purity SiO2 glass defect free surface (32) and printed media subject wafer which has a radiation sensitive surface.