A ferroelectric random access memory (FRAM) device, and a fabrication method
therefor,
includes seed layers above and below a ferroelectric layer. The seed layers formed
above and below faces of the ferroelectric layer can prevent an imprint phenomenon
from being generated in a ferroelectric capacitor by making the characteristics
of the upper and lower interfaces of the ferroelectric layer be the same. This
is accomplished by providing upper and lower seed layers that are crystallized
prior to the ferroelectric layer during a thermal treatment. This results in crystallization
occurring from the upper and lower faces to the center of the ferroelectric layer,
making the characteristics of the upper and lower interfaces of the ferroelectric
layer the same, thereby improving ferroelectric capacitor characteristics.