A nonvolatile semiconductor memory device includes a substrate, a plurality of transistors formed on the substrate to constitute a latch, a plate line, and a pair of capacitors each including a lower electrode, a ferroelectric film, and an upper electrode, the pair of capacitors being provided in a layer situated above the substrate and below a metal wiring layer in which the plate line is formed.

 
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< Ferroelectric memory and electronic apparatus

< Memory cell array including ferroelectric capacitors, method for making the same, and ferroelectric memory device

> Evaporation of Y-Si-O films for medium-K dielectrics

> Semiconductor memory device having electrical connection by side contact

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