The invention is a semiconductor device and a method of forming the semiconductor
device. The semiconductor device comprises a substrate; buried bitlines formed
in the substrate narrower than achievable at a resolution limit of lithography;
a doped region formed adjacent at least one of the buried bitlines; a charge trapping
layer disposed over the substrate; and a conductive layer disposed over the charge
trapping layer, wherein the doped region adjacent the least one of the buried bitlines
inhibits a leakage current between the buried bitlines.