A ferroelectric memory device including a main bitline pull-up controller for pulling up a main bitline to a positive voltage, a column selection controller for connecting the main bitline to a data bus by a column selection control signal, a cell array connected between the main bitline pull-up controller and the column selection controller, and a driving voltage booster for comparing a predetermined threshold voltage with a detected power voltage and regulating an output level of the driving voltage according to the comparison result.

 
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