A semiconductor light-emitting device of this invention includes at least a first
cladding layer formed on a substrate, a light-emitting structure including an active
layer made of In1-;X-;YGaXAlYN (0X, Y1,
0X+Y<1) and formed on the first cladding layer, and a second cladding layer
formed on the light-emitting structure. The active layer is made of a material
with a small Auger effect and a small dependency of its band gap energy on environment temperature.
