To develop a small quantity of various kinds of semiconductor devices in a short
time and to realize a photomask suitable to be manufactured at a low cost. A shade
pattern of a photomask is constituted by containing nanoparticles such as carbon
in an organic film such as a photoresist film. A pattern is transferred to a photoresist
on a semiconductor wafer by means of the reduction projection exposure using the
photomask. At the time of the above exposure, it is possible to select exposure
light within a range of wide wavelengths including i-line, KrF excimer laser beam,
ArF excimer laser beam, or the like.
