A direct-wafer-bonded, double heterojunction, light emitting semiconductor device
includes an ordered array of quantum dots made of one or more indirect band gap
materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C-SiC, and
hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor
cladding layer selected from a group consisting of SiC, 3C-SiC, 4H-SiC, 6H-SiC
and diamond, and a p-type semiconductor cladding layer selected from a group consisting
of SiC, 3C-SiC, 4H-SiC, 6H-SiC and diamond. A Ni contact is provided for the n-type
cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type
cladding layer. The quantum dots have a thickness that is no greater than about
250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center
spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms.
