A nonvolatile ferroelectric memory device and a method for fabricating the same
are provided that increase a process margin and simplify process steps. In addition,
a number of masks is reduced to save the cost and at the same time minimize or
reduce a layout area. The nonvolatile ferroelectric memory device can include first
and second split wordlines formed along a first direction on a substrate at prescribed
intervals, a first electrode of a first ferroelectric capacitor on the second split
wordline and a first electrode of a second ferroelectric capacitor on the first
split wordline, first and second ferroelectric layers respectively on surfaces
of the first electrodes of the first and second ferroelectric capacitors, and second
electrodes of the first and second ferroelectric capacitors, respectively, on surfaces
of the first and second ferroelectric layers. A first conductive layer connects
the second electrode of the first ferroelectric capacitor with the substrate at
one side of the second split wordline, and a second conductive layer connects the
second electrode of the second ferroelectric capacitor with the substrate at one
side of the first split wordline. First and second bitlines are coupled with the
substrate at another sides of the respective split wordlines.
