An exemplary system and method for providing a vertically integrated photosensing
element suitably adapted for use in CMOS imaging applications is disclosed as comprising
inter alia: a processed CMOS layer (420); and a photosensing element (380)
fabricated in a vertically integrated optically active layer (320, 350),
where the optically active layer (320, 350) is bonded to the CMOS layer
(420) and the optically active layer (320, 350) is positioned near
a metalization surface (405) of the CMOS layer (420). Disclosed features
and specifications may be variously controlled, configured, adapted or otherwise
optionally modified to further improve or otherwise optimize photosensing performance
or other material characteristics. Exemplary embodiments of the present invention
representatively provide for integrated photosensing components that may be readily
incorporated with existing technologies for the improvement of CMOS imaging, device
package form factors, weights and/or other manufacturing, device or material performance metrics.
