A storage capacitor plate for a semiconductor assembly having a substantially
continuous
porous conductive storage plate comprising silicon nanocrystals residing along
a surface of a conductive material and along a surface of a coplanar insulative
material adjacent the conductive material, a capacitor cell dielectric overlying
the silicon nanocrystals and an overlying conductive top plate. The conductive
storage plate is formed by a semiconductor fabrication method comprising forming
silicon nanocrystals on a surface of a conductive material and on a surface of
an insulative material adjacent the conductive material, wherein silicon nanocrystals
contain conductive impurities and are adjoined to form a substantially continuous
porous conductive layer.
