This invention concerns a process for producing integrated circuits containing
at least one layer of elemental metal which during the processing of the integrated
circuit is at least partly in the form of metal oxide, and the use of an organic
compound containing certain functional groups for the reduction of a metal oxide
layer formed during the production of an integrated circuit. According to the present
process the metal oxide layer is at least partly reduced to elemental metal with
a reducing agent selected from organic compounds containing one or more of the
following functional groups: alcohol (-OH), aldehyde (-CHO), and carboxylic acid (-COOH).
