A method for manufacturing a semiconductor light-emitting device. The semiconductor
light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor
layer, and a p-type semiconductor layer successively formed atop the substrate.
The method forms an intermediate layer having a predetermined pattern between the
substrate and the semiconductor layer, or between the semiconductor layer and the
n-type semiconductor layer, or between the n-type semiconductor layer and the p-type
semiconductor layer. The p-type semiconductor layer has an uneven top layer due
to the intermediate layer having a predetermined pattern and the total internal
reflection of the LED can be reduced. The intermediate layer is a conductive material
to reduce serial resistance of the LED.
