A light-emitting diode is based on an undoped intrinsic SiC substrate on which
are grown: an insulating buffer or nucleation structure; a light-emitting structure;
window layers; a semi-transparent conductive layer; a bond pad adhesion layer;
a p-type electrode bond pad; and an n-type electrode bond pad. In one embodiment,
the light-emitting surface of the substrate is roughened to maximize light emission.
