A permanently-ON MOS transistor comprises silicon source and drain regions of
a
first conductivity type in a silicon well region of a second conductivity type.
A silicon contact region of the first conductivity types is buried in the well
region, said contact region contacting said source region and said drain region.
A first gate insulating layer is selectively placed over the silicon source and
drain regions. A second gate insulating layer is selectively placed over the first
gate insulating layer and over the silicon contact region. A polysilicon gate region
is placed over the second gate insulating layer.
