A semiconductor laser device has on a compound semiconductor substrate at least
a lower cladding layer, an active layer, an upper cladding layer and a contact
layer. An upper part of the upper cladding layer and the contact layer are formed
as a mesa-structured portion having a ridge stripe pattern, and the both sides
of the mesa structured portion are buried with a current blocking layer. The laser
device includes the current blocking layer having a pit-like recess penetrating
thereof and extending towards the compound semiconductor substrate, and a portion
of the recess other than that penetrating the current blocking layer being covered
or buried with an insulating film or a compound semiconductor layer with a high
resistivity. The compound semiconductor substrate and the electrode layer thus
can be kept insulated in an area other than a current injection area, thereby non-emissive
failure due to short-circuit is prevented.
