Disclosed herein is a siloxane-based resin prepared by hydrolyzing and
polycondensing a cyclic siloxane compound, a silane compound having three hydrolysable
functional groups and a silane compound having three hydrolysable functional groups
and one heat-labile functional group, in an organic solvent in the presence of
a catalyst and water. Also, disclosed herein is a method of forming an insulating
film between interconnect layers of a semiconductor device using the siloxane-based
resin thus prepared, whereby an insulating film having low dielectric constant
as well as excellent mechanical properties can be obtained.
