A light emitting diode (LED) device is provided. The LED device includes a device
substrate, a first doped layer of a first conductivity type, a light emitting layer,
a second doped layer of a second conductivity type, a transparent conductive oxide
layer, a reflecting layer and two electrodes. The first doped layer is deposited
on the device substrate, the light emitting layer is deposited on a portion of
the first doped layer, and the second doped layer is deposited on the light emitting
layer. The first and the second doped layers are comprised of III-V semiconductor
material respectively. The transparent conductive oxide layer is deposited on the
second doped layer, and the reflecting layer is deposited on the transparent conductive
oxide layer. The two electrodes are deposited on the reflecting layer and the first
doped layer respectively.
