A semiconductor LED device in which a reverse p-n junction diode protective element
is integrated with a single p-n junction AlGaInN semiconductor LED element having
a conventional structure, so that the semiconductor LED device exhibits high resistance
to reverse voltage. In accordance with the function of the reverse p-n junction
diode protective element, the p-n junction LED element can be securely protected
from external static electricity and momentary reverse overvoltage applied thereto.
In particular, it is possible to basically eliminate causes of a p-n junction breakage
occurring in an LED element due to application of a reverse voltage frequently
occurring during a process of the LED element, thereby greatly improving the reliability
and yield of the LED element. The p-n junction LED element and the reverse p-n
junction diode protective element are integrated with each other on the same substrate
such that electrical connection is provided between the p-electrode of the LED
element and the n-electrode of the protective element and between the n-electrode
of the LED element and the p-electrode of the protective element in accordance
with a semiconductor process.
