The semiconductor device of the present invention includes: a substrate; a first
conductor film supported by the substrate; an insulating film formed on the substrate
to cover the first conductor film, an opening being formed in the insulating film;
and a second conductor film, which is formed within the opening of the insulating
film and is in electrical contact with the first conductor film. The second conductor
film includes: a silicon-containing titanium nitride layer formed within the opening
of the insulating film; and a metal layer formed over the silicon-containing titanium
nitride layer. The metal layer is mainly composed of copper.
