A photosensitive diode has an active region defining a majority carrier of a
first
conductivity type and a minority carrier of a second conductivity type. At least
one extraction region is disposed on a first side of the active region and has
a majority carrier of the second conductivity type. Carriers of the second conductivity
type are extracted from the active region and into the extraction region under
a condition of reverse bias. At least one exclusion region is disposed on a second
side of the active region and has a majority carrier of the first conductivity
type. The exclusion region prevents entry of its minority carriers, which are of
the second conductivity type, into the active region while in a condition of reverse
bias. The exclusion region includes a superlattice with a plurality of layers.
