Structures and methods for three-dimensional image sensing using high
frequency modulation includes CMOS-implementable sensor structures using differential
charge transfer, including such sensors enabling rapid horizontal and slower vertical
dimension local charge collection. Wavelength response of such sensors can be altered
dynamically by varying gate potentials. Methods for producing such sensor structures
on conventional CMOS fabrication facilities include use of "rich" instructions
to command the fabrication process to optimize image sensor rather than digital
or analog ICs. One detector structure has closely spaced-apart, elongated finger-like
structures that rapidly collect charge in the spaced-apart direction and then move
collected charge less rapidly in the elongated direction. Detector response is
substantially independent of the collection rate in the elongated direction.
