An exemplary nonvolatile memory array comprises a substrate and a plurality of
memory cells formed on the substrate, each of the memory cells being addressable
via at least first and second conductors during operations. An exemplary memory
cell in the exemplary memory array includes a ferromagnetic annular data layer
having an opening, the opening enabling the second conductor to electrically contact
the first conductor, an intermediate layer on at least a portion of the annular
data layer, and a soft reference layer on at least a portion of the intermediate layer.
