A surface emitting semiconductor laser includes a substrate, a first semiconductor
multilayer reflector formed on the substrate, an active region formed on the first
semiconductor multilayer reflector, a second semiconductor multilayer reflector
formed on the active region, a current confinement layer interposed between the
first and second semiconductor multilayer reflectors and partially including an
oxide region, and an insulating layer formed on a coated surface provided by a
semiconductor layer which is part of the first semiconductor multilayer reflector
and is revealed after removal of a surface oxidation layer.
