A method of fabricating a silicon-on-insulator structure having a silicon surface
layer in a semiconductor workpiece, is carried out by maintaining the workpiece
at an elevated temperature and producing an oxygen-containing plasma in the chamber
while applying a bias to the workpiece and setting the bias to a level corresponding
to an implant depth in the workpiece below the silicon surface layer to which oxygen
atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece
having an oxygen concentration distribution generally centered at the implant depth
and having a finite oxygen concentration in the silicon surface layer. The oxygen
concentration in the silicon surface layer is then reduced to permit epitaxial
silicon deposition.
