A gate dielectric containing LaAlO3 and method of fabricating a gate
dielectric contained LaAlO3 produce a reliable gate dielectric having
a thinner equivalent oxide thickness than attainable using SiO2. The
LaAlO3 gate dielectrics formed are thermodynamically stable such that
these gate dielectrics will have minimal reactions with a silicon substrate or
other structures during processing. A LaAlO3 gate dielectric is formed
by evaporating Al2O3 at a given rate, evaporating La2O3
at another rate, and controlling the two rates to provide an amorphous film
containing LaAlO3 on a transistor body region. The evaporation deposition
of the LaAlO3 film is performed using two electron guns to evaporate
dry pellets of Al2O3 and La2O3. The
two rates for evaporating the materials are selectively chosen to provide a dielectric
film composition having a predetermined dielectric constant ranging from the dielectric
constant of an Al2O3 film to the dielectric constant of a
La2O3 film. In addition to forming a LaAlO3 gate
dielectric for a transistor, memory devices, and information handling devices such
as computers include elements having a LaAlO3 gate electric with a thin
equivalent oxide thickness.
