Disclosed is a Group III nitride semiconductor device comprising a stress-absorbing
layer having: an amorphous silicon nitride layer, an aluminum interlayer, an amorphous
aluminum nitride pre-layer and a polycrystalline Group III nitride layer containing
aluminum. The stress-absorbing layer is located between a silicon substrate and
a Group III nitride semiconductor, for alleviating stress resulted from different
lattice constants between the Group III nitride substance and the silicon substrate,
thereby preventing cracking of the Group III nitride semiconductor due to the stress.
Further disclosed is a method of manufacturing Group III nitride semiconductor device.
