Bipolar junction transistor with a counterdoped collector region

   
   

An improved BJT is described that maximizes both Bvceo and Ft/Fmax for optimum performance. Scattering centers are introduced in the collector region (80) of the BJT to improve Bvceo. The inclusion of the scattering centers allows the width of the collector region WCD (90) to be reduced leading to an improvement in Ft/Fmax.

 
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