Structures and methods for making a magnetic structure are discussed.
Various embodiments increase a magnetic field to unambiguously select a magnetic
memory cell structure. One method includes folding a current line into two portions
around a magnetic memory cell structure. Each portion contributes its magnetic
flux to increase the magnetic field to unambiguously select the magnetic memory
cell structure. Another method increases the flux density by reducing a cross-sectional
area of a portion of the current line, wherein the portion of the current line
is adjacent to the to the magnetic memory cell structure.
