A thin film transistor substrate including a semiconductor layer having a source
region and a drain region, an insulating film and a gate electrode which are formed
on the semiconductor layer, an interlayer insulating film which is a film stack
with mutually different dielectric constants and which covers the gate electrode,
a source region contact hole and a drain region contact hole which are formed on
the interlayer insulating film, a pixel electrode connected to the source region
through the source region contact hole, a first conductive film connected to the
drain region through the drain region contact hole and formed of the same film
as that of the pixel electrode, and a second conductive film connected to the drain
region through the first conductive film.
