GaAs substrate with Sb buffering for high in devices

   
   

GaAs substrates with compositionally graded buffer layers for matching lattice constants with high-Indium semiconductor materials such as quantum well infrared photoconductor devices and thermo photo voltaic devices are disclosed.

 
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< Thyrister semiconductor device

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> Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure

> Hetero-junction bipolar transistor and a method for manufacturing the same

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