Disclosed is a semiconductor laser device and manufacturing method thereof
in which light absorption in a facet decreases and stable high power laser beam
is generated. The semiconductor laser device having a stack structure in which
a lower clad layer, an active layer, an upper clad layer, a current blocking layer,
and a cap layer are sequentially formed, the semiconductor laser device includes:
a Zn diffusion source layer on a facet of the stack structure; and a window layer
between the Zn diffusion source layer and the stack structure, for preventing light absorption.
