A process for producing aluminum oxide thin films on a substrate by the ALD method
comprises the steps of bonding a vaporizable aluminum compound to a growth substrate,
and converting the bonded organoaluminum compound to aluminum oxide. The bonded
aluminum compound is converted to aluminum oxide by contacting it with a reactive
vapor source of oxygen other than water, and the substrate is kept at a temperature
of less than 190 C. during the growth process. By means of the invention
it is possible to produce films of good quality at low temperatures. The dielectric
thin films having a dense structure can be used for passivating surfaces that do
not endure high temperatures. Such surfaces include, for example, polymer films
such as organic electroluminescent displays. Further, when a water-free oxygen
source is used, surfaces that are sensitive to water can be passivated.
