Semiconductor device that include silicide layers

   
   

There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively etched to form a contact pad or conductive interconnects.

Se divulga un método de fabricar TFTs que reduce resistencia de la interconexión mejorando contactos a las regiones de source/drain. Una capa del silicide se forma en contacto íntimo con las regiones de source/drain. La capa restante de la metalización se graba al agua fuerte selectivamente para formar un cojín del contacto o conductor interconecta.

 
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